MMBT9013 as complementary types the pnp transistor mmbt9012 is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 40 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 500 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at v ce = 1 v, i c = 50 ma current gain group at v ce = 1 v, i c = 500 ma g h h fe h fe h fe 100 160 40 250 400 - - - - collector base cutoff current at v cb = 35 v i cbo - 100 na emitter base cutoff current at v eb = 5 v i ebo - 100 na collector bae breakdown voltage at i c = 100 a v (br)cbo 40 - v collector emitter breakdown voltage at i c = 1 ma v (br)ceo 30 - v emitter base breakdown voltage at i e = 100 a v (br)ebo 5 - v collector emitter saturation voltage at i c = 500 ma, i b = 50 ma v ce(sat) - 0.6 v base emitter saturation voltage at i c = 500 ma, i b = 50 ma v be(sat) - 1.2 v base emitter voltage at v ce = 1 v, i c = 100 ma v be - 1 v gain bandwidth product at v ce = 6 v, i c = 20 ma f t 100 - mhz sot-23 plastic package product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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